The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Jul. 21, 2011
John B. Campi, Jr., Westford, VT (US);
Shunhua T. Chang, South Burlington, VT (US);
Kiran V. Chatty, Oviedo, FL (US);
Robert J. Gauthier, Jr., Hinesburg, VT (US);
Junjun LI, Williston, VT (US);
Rahul Mishra, Essex Junction, VT (US);
Mujahid Muhammad, Essex Junction, VT (US);
John B. Campi, Jr., Westford, VT (US);
Shunhua T. Chang, South Burlington, VT (US);
Kiran V. Chatty, Oviedo, FL (US);
Robert J. Gauthier, Jr., Hinesburg, VT (US);
Junjun Li, Williston, VT (US);
Rahul Mishra, Essex Junction, VT (US);
Mujahid Muhammad, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An electrostatic discharge protection device, methods of fabricating an electrostatic discharge protection device, and design structures for an electrostatic discharge protection device. A drain of a first field-effect transistor and a diffusion resistor of higher electrical resistance may be formed as different portions of a doped region. The diffusion resistor, which is directly coupled with the drain of the first field-effect transistor, may be defined using an isolation region of dielectric material disposed in the doped region and selective silicide formation. The electrostatic discharge protection device may also include a second field-effect transistor having a drain as a portion the doped region that is directly coupled with the diffusion resistor and indirectly coupled by the diffusion resistor with the drain of the first field-effect transistor.