The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Mar. 13, 2012
Johnathan E. Faltermeier, Delanson, NY (US);
Judson R. Holt, Wappingers Falls, NY (US);
Xuefeng Hua, Guilderland, NY (US);
Johnathan E. Faltermeier, Delanson, NY (US);
Judson R. Holt, Wappingers Falls, NY (US);
Xuefeng Hua, Guilderland, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A transistor device includes a gate conductor spaced above a semiconductor substrate by a gate dielectric, wherein the semiconductor substrate comprises a channel region underneath the gate conductor and recessed regions on opposite sides of the channel region, wherein the channel region comprises undercut areas under the gate conductor; a stressed material embedded in the undercut areas of the channel region under the gate conductor; and epitaxially grown source and drain regions disposed in the recessed regions of the semiconductor substrate laterally adjacent to the stressed material.