The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Feb. 25, 2010
Takashi Ogawa, Chiba, JP;
Kenichi Nishinaka, Chiba, JP;
Yoshihiro Koyama, Chiba, JP;
SII Nanotechnology Inc., Chiba, JP;
Abstract
The crystal structure of the emitter can be accurately grasped from a FIM image without being influenced by disturbances, such as contamination, and even if the rearrangement of atoms has been performed, whether or not the crystal structure of the emitter has returned to the original state can also be accurately determined. There is a provided a focused ion beam apparatus including an emitter, a gas sourcewhich supplies gas G, a cooling unitwhich cools the emitter, a heating unitwhich heats the tip of the emitter, an extraction power source unitwhich applies an extraction voltage to ionize the gas into gas ions at the tip of the emitter, and then extract the gas ions, a beam optical systemwhich makes the extracted gas ions into a focused ion beam (FIB), and then radiates the focused ion beam onto a sample S, an image acquiring mechanismwhich acquires a FIM image of the tip of the emitter, and a control unithaving a display unit and a storage unit. A guide which displays an ideal crystal structure of the tip of the emitter is stored in advance in the storage unit. The control unit is enabled to display the guide in the state of overlapping the acquired FIM image on the display unit.