The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Jan. 25, 2011
Josephine B. Chang, Bedford Hills, NY (US);
Leslie Charns, San Jose, CA (US);
Jason E. Cummings, Smithfield, NC (US);
Michael A. Guillorn, Yorktown Heights, NY (US);
Lukasz J. Hupka, Croton-on-Hudson, NY (US);
Dinesh R. Koli, Tarrytown, NY (US);
Tomohisa Konno, Mie, JP;
Mahadevaiyer Krishnan, Hopewell Junction, NY (US);
Michael F. Lofaro, Danbury, CT (US);
Jakub W. Nalaskowski, Yorktown Heights, NY (US);
Masahiro Noda, Mie, JP;
Dinesh K. Penigalapati, Tarrytown, NY (US);
Tatsuya Yamanaka, Mie, JP;
Josephine B. Chang, Bedford Hills, NY (US);
Leslie Charns, San Jose, CA (US);
Jason E. Cummings, Smithfield, NC (US);
Michael A. Guillorn, Yorktown Heights, NY (US);
Lukasz J. Hupka, Croton-on-Hudson, NY (US);
Dinesh R. Koli, Tarrytown, NY (US);
Tomohisa Konno, Mie, JP;
Mahadevaiyer Krishnan, Hopewell Junction, NY (US);
Michael F. Lofaro, Danbury, CT (US);
Jakub W. Nalaskowski, Yorktown Heights, NY (US);
Masahiro Noda, Mie, JP;
Dinesh K. Penigalapati, Tarrytown, NY (US);
Tatsuya Yamanaka, Mie, JP;
International Business Machines Corporation, Armonk, NY (US);
JSR Corporation, Tokyo, JP;
Abstract
A planarization method includes planarizing a semiconductor wafer in a first chemical mechanical polish step to remove overburden and planarize a top layer leaving a thickness of top layer material over underlying layers. The top layer material is planarized in a second chemical mechanical polish step to further remove the top layer and expose underlying layers of a second material and a third material such that a selectivity of the top layer material to the second material to the third material is between about 1:1:1 to about 2:1:1 to provide a planar topography.