The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Jun. 07, 2012
Amit Khandelwal, Cupertino, CA (US);
Madhu Moorthy, San Jose, CA (US);
Avgerinos V. Gelatos, Redwood City, CA (US);
Kai Wu, Palo Alto, CA (US);
Amit Khandelwal, Cupertino, CA (US);
Madhu Moorthy, San Jose, CA (US);
Avgerinos V. Gelatos, Redwood City, CA (US);
Kai Wu, Palo Alto, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments of the invention provide a method for depositing tungsten-containing materials. In one embodiment, a method includes forming a tungsten nucleation layer over an underlayer disposed on the substrate while sequentially providing a tungsten precursor and a reducing gas into a process chamber during an atomic layer deposition (ALD) process and depositing a tungsten bulk layer over the tungsten nucleation layer, wherein the reducing gas contains hydrogen gas and a hydride compound (e.g., diborane) and has a hydrogen/hydride flow rate ratio of about 500:1 or greater. In some examples, the method includes flowing the hydrogen gas into the process chamber at a flow rate within a range from about 1 slm to about 20 slm and flowing a mixture of the hydride compound and a carrier gas into the process chamber at a flow rate within a range from about 50 sccm to about 500 sccm.