The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Mar. 31, 2009
Hiroyuki Iwashita, Shinjuku-ku, JP;
Hiroaki Shishido, Shinjuku-ku, JP;
Atsushi Kominato, Shinjuku-ku, JP;
Masahiro Hashimoto, Shinjuku-ku, JP;
Morio Hosoya, Shinjuku-ku, JP;
Hiroyuki Iwashita, Shinjuku-ku, JP;
Hiroaki Shishido, Shinjuku-ku, JP;
Atsushi Kominato, Shinjuku-ku, JP;
Masahiro Hashimoto, Shinjuku-ku, JP;
Morio Hosoya, Shinjuku-ku, JP;
Hoya Corporation, Tokyo, JP;
Abstract
A photomask blank for producing a photomask to which an ArF excimer laser light is applied. The blank includes a light transmissive substrate on which a thin film having a multilayer structure is provided. The thin film has a light-shielding film in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order. The light-shielding layer comprises chromium and nitrogen, and the chromium content is more than 50 atomic %. The front-surface antireflection layer and the back-surface antireflection layer each has an amorphous structure made of a material comprising chromium, nitrogen, oxygen and carbon. The chromium content ratio of the front-surface antireflection layer and the back-surface antireflection layer is 40 atomic % or less. A first sum of nitrogen content and oxygen content of the back-surface antireflection layer is less than a second sum of nitrogen content and oxygen content of the front-surface antireflection layer.