The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8508001 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 13, 2013

Filed:

Aug. 25, 2011
Applicants:

Steven Langdon, Dresden, DE;

Stefan Flachowsky, Dresden, DE;

Thilo Scheiper, Dresden, DE;

Inventors:

Steven Langdon, Dresden, DE;

Stefan Flachowsky, Dresden, DE;

Thilo Scheiper, Dresden, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/45 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 27/14 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed herein is a semiconductor device that includes a semiconducting substrate and a work-function adjusting layer positioned at least partially in the semiconducting substrate, the work-function adjusting layer having a middle section, opposing ends and an end region located proximate each of said opposing ends and a gate electrode positioned above the work-function adjusting layer. Each of the end regions has a maximum thickness that is at least 25% greater than an average thickness of the middle section of the work-function adjusting layer.


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Langdon, Steven. (2013). Semiconductor device with work function adjusting layer having varied thickness in a gate width direction and methods of making same (U.S. Patent No. 8508001). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8508001

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