The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2013
Filed:
Oct. 12, 2011
Lu-an Chen, Keelung, TW;
Tai-hsiang Lai, Miaoli County, TW;
Tien-hao Tang, Hsinchu, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for forming an NMOS transistor includes forming a P-substrate; forming an N-well on the P-substrate; forming an N-drift region on the N-well; forming an n+ drain on the N-drift region; forming a plurality of first contacts on the n+ drain along a longitudinal direction; forming a P-body on the N-well; forming a source on the P-body, the source including a plurality of n+ doped regions and at least one p+ doped region arranged along the longitudinal direction; forming a plurality of second contacts on the plurality of n+ doped regions and the at least one p+ doped region; forming a polygate on the P-body; and forming a gate oxide between the polygate and the source.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile