The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2013
Filed:
Aug. 08, 2011
Duan-quan Liao, Singapore, SG;
Yi-kun Chen, Singapore, SG;
Xiao-zhong Zhu, Singapore, SG;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A fabricating method of semiconductor structure is provided. First, a substrate with a dielectric layer formed thereon is provided. The dielectric layer has a first opening and a second opening exposing a portion of the substrate. Further, a gate dielectric layer including a high-k dielectric layer and a barrier layer stacked thereon had been formed on the bottoms of the first opening and the second opening. Next, a sacrificial layer is formed on the portion of the gate dielectric layer within the second opening. Next, a first work function metal layer is formed to cover the portion of the gate dielectric layer within the first opening and the sacrificial layer. Then, the portion of the first work function metal layer and the sacrificial layer within the second opening are removed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile