The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2013
Filed:
May. 04, 2012
Applicants:
April D. Schricker, Palo Alto, CA (US);
S. Brad Herner, San Jose, CA (US);
Mark H. Clark, Santa Clara, CA (US);
Inventors:
April D. Schricker, Palo Alto, CA (US);
S. Brad Herner, San Jose, CA (US);
Mark H. Clark, Santa Clara, CA (US);
Assignee:
SanDisk 3D LLC, Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a memory cell is provided that includes forming a steering element above a substrate, and forming a reversible resistance-switching element coupled to the steering element. The reversible resistance-switching element includes one or more of TiO, TaO, NbO, AlO, HfO, and VO, and the reversible resistance switching element is formed without being etched. Numerous other aspects are provided.