The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2013
Filed:
Jan. 07, 2011
Dan B. Millward, Boise, ID (US);
Yuan He, Boise, ID (US);
Lijing Gou, Boise, ID (US);
Zishu Zhang, Boise, ID (US);
Anton J. Devilliers, Boise, ID (US);
Jianming Zhou, Boise, ID (US);
Kaveri Jain, Boise, ID (US);
Scott Light, Boise, ID (US);
Michael Hyatt, Boise, ID (US);
Dan B. Millward, Boise, ID (US);
Yuan He, Boise, ID (US);
Lijing Gou, Boise, ID (US);
Zishu Zhang, Boise, ID (US);
Anton J. deVilliers, Boise, ID (US);
Jianming Zhou, Boise, ID (US);
Kaveri Jain, Boise, ID (US);
Scott Light, Boise, ID (US);
Michael Hyatt, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Methods of forming a patterned, silicon-enriched developable antireflective material. One such method comprises forming a silicon-enriched developable antireflective composition. The silicon-enriched developable antireflective composition comprises a silicon-enriched polymer and a crosslinking agent. The silicon-enriched polymer and the crosslinking agent are reacted to form a silicon-enriched developable antireflective material that is insoluble and has at least one acid-sensitive moiety. A positive-tone photosensitive material, such as a positive-tone photoresist, is formed over the silicon-enriched developable antireflective material and regions thereof are exposed to radiation. The exposed regions of the positive-tone photosensitive material and underlying regions of the silicon-enriched developable antireflective material are removed. Additional methods are disclosed, as are semiconductor device structures including a silicon-enriched developable antireflective material.