The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2013
Filed:
Jul. 09, 2008
Veeraraghavan S. Basker, Schenectady, NY (US);
Willard E. Conley, Schenectady, NY (US);
Steven J. Holmes, Guilderland, NY (US);
David V. Horak, Essex Junction, VT (US);
Veeraraghavan S. Basker, Schenectady, NY (US);
Willard E. Conley, Schenectady, NY (US);
Steven J. Holmes, Guilderland, NY (US);
David V. Horak, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A first photoresist is applied over an optically dense layer and lithographically patterned to form an array of first photoresist portions having a pitch near twice a minimum feature size. The pattern in the first photoresist portions, or a first pattern, is transferred into the ARC layer and partly into the optically dense layer. A second photoresist is applied and patterned into another array having a pitch near twice the minimum feature size and interlaced with the first pattern. The pattern in the second photoresist, or a second pattern, is transferred through the ARC portions and partly into the optically dense layer. The ARC portions are patterned with a composite pattern including the first pattern and the second pattern. The composite pattern is transferred through the optically dense layer and into the underlayer to form a sublithographic pattern in the underlayer.