The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Sep. 29, 2012
Andrew Clark, Los Altos, CA (US);
Robin Smith, Palo Alto, CA (US);
Rytis Dargis, Fremont, CA (US);
Erdem Arkun, San Carlos, CA (US);
Michael Lebby, Apache Junction, AZ (US);
Andrew Clark, Los Altos, CA (US);
Robin Smith, Palo Alto, CA (US);
Rytis Dargis, Fremont, CA (US);
Erdem Arkun, San Carlos, CA (US);
Michael Lebby, Apache Junction, AZ (US);
Translucent, Inc., Palo Alto, CA (US);
Abstract
A method of growing single crystal III-N material on a semiconductor substrate includes providing a substrate including one of crystalline silicon or germanium and a layer of rare earth oxide. A layer of single crystal III-N material is epitaxially grown on the substrate using a process that elevates the temperature of the layer of rare earth oxide into a range of approximately 750° C. to approximately 1250° C. in the presence of an N or a III containing species, whereby a portion of the layer of rare earth oxide is transformed to a new alloy.