The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Sep. 22, 2011
Applicants:
Stefan Flachowsky, Dresden, DE;
Thilo Scheiper, Dresden, DE;
Steven Langdon, Dresden, DE;
Jan Hoentschel, Dresden, DE;
Inventors:
Stefan Flachowsky, Dresden, DE;
Thilo Scheiper, Dresden, DE;
Steven Langdon, Dresden, DE;
Jan Hoentschel, Dresden, DE;
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/425 (2006.01);
U.S. Cl.
CPC ...
Abstract
When forming sophisticated transistors, the channel region may be provided such that the gradient of the band gap energy of the channel material may result in superior charge carrier velocity. For example, a gradient in concentration of germanium, carbon and the like may be implemented along the channel length direction, thereby obtaining higher transistor performance.