The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8501374 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 06, 2013

Filed:

Dec. 21, 2012
Applicants:

Akira Fujimura, Saratoga, CA (US);

Michael Tucker, Los Altos, CA (US);

Inventors:

Akira Fujimura, Saratoga, CA (US);

Michael Tucker, Los Altos, CA (US);

Assignee:

D2S, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/20 (2012.01); G03F 9/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

In the field of semiconductor production using shaped charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, in which a plurality of shaped beam shots is determined which will form a target pattern on a surface, within a predetermined tolerance, where the plurality of shaped beam shots includes a plurality of circular or nearly-circular character projection (CP) shots plus one or more non-circular shot, and where at least two shots in the plurality of circular or nearly-circular shots overlap. Methods for manufacturing a surface and for manufacturing a semiconductor device on a substrate are also disclosed.


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