The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8497062 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 30, 2013

Filed:

Mar. 13, 2008
Applicants:

Norihiro Natsume, Tokyo, JP;

Norihiko Sugie, Tokyo, JP;

Junichi Takahashi, Tokyo, JP;

Inventors:

Norihiro Natsume, Tokyo, JP;

Norihiko Sugie, Tokyo, JP;

Junichi Takahashi, Tokyo, JP;

Assignee:

JSR Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/32 (2006.01); C08F 12/32 (2006.01); G03F 7/11 (2006.01);
U.S. Cl.
CPC ...
Abstract

The objective of the present invention is to provide a resin for forming an upper antireflective film and a composition for forming an upper antireflective film that can reduce a standing wave effect satisfactorily and lead excellent solubility in an alkaline developer in lithography and a method for forming a resist pattern. Specifically, the resin for forming an upper antireflective film has at least one unit selected from a repeating unit represented by the formula (1) and a repeating unit represented by the formula (2), has a weight average molecular weight of 1,000 to 100,000 as measured by GPC method, and is soluble in an alkaline developer. (In the formulae (1) and (2), Rto Rindependently represent a hydrogen atom, —OH, —COOH or —SOH, provided that all of Rto Ror Rto Rdo not represent a hydrogen atom in a molecule.)


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Natsume, Norihiro. (2013). Resin for formation of upper antireflective film, composition for formation of upper antireflective film, and resist pattern formation method (U.S. Patent No. 8497062). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8497062

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