The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2013
Filed:
Oct. 06, 2008
Applicants:
Tadahiro Ohmi, Miyagi, JP;
Akinobu Teramoto, Miyagi, JP;
Tomoyuki Suwa, Miyagi, JP;
Rihito Kuroda, Miyagi, JP;
Hideo Kudo, Tokyo, JP;
Yoshinori Hayamizu, Tokyo, JP;
Inventors:
Tadahiro Ohmi, Miyagi, JP;
Akinobu Teramoto, Miyagi, JP;
Tomoyuki Suwa, Miyagi, JP;
Rihito Kuroda, Miyagi, JP;
Hideo Kudo, Tokyo, JP;
Yoshinori Hayamizu, Tokyo, JP;
Assignees:
National University Corporation Tohoku University, Miyagi, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
On a surface of a semiconductor substrate, a plurality of terraces formed stepwise by an atomic step are formed in the substantially same direction. Using the semiconductor substrate, a MOS transistor is formed so that no step exists in a carrier traveling direction (source-drain direction).