The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2013

Filed:

Aug. 22, 2011
Applicants:

Tai-hsiang Lai, Hsinchu, TW;

Lu-an Chen, Keelung, TW;

Tien-hao Tang, Hsinchu, TW;

Inventors:

Tai-Hsiang Lai, Hsinchu, TW;

Lu-An Chen, Keelung, TW;

Tien-Hao Tang, Hsinchu, TW;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 23/62 (2006.01);
U.S. Cl.
CPC ...
Abstract

An electrostatic discharge protection device comprises a substrate with a first conductivity, a gate, a drain structure and a source structure. The gate is disposed on a surface of the substrate. The drain structure with a second conductivity type comprises a first doping region with a first doping concentration disposed adjacent to the gate and extending into the substrate from the surface of the substrate, a second doping region extending into and stooped at the first doping region from the surface of the substrate and having a second doping concentration substantially greater than the first doping concentration, and a third doping region disposed in the substrate beneath the second doping region and having a third doping concentration substantially greater than the first doping concentration. The source structure with the second conductivity is disposed in the substrate and adjacent to the gate electrode.


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