The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2013
Filed:
Mar. 11, 2010
Applicants:
Masato Kushibiki, Nirasaki, JP;
Eiichi Nishimura, Nirasaki, JP;
Inventors:
Masato Kushibiki, Nirasaki, JP;
Eiichi Nishimura, Nirasaki, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of processing a substrate having a processing target layer and an organic film serving as a mask layer includes a mineralizing process of mineralizing the organic film. The mineralizing process includes an adsorption process for allowing a silicon-containing gas to be adsorbed onto a surface of the organic film; and an oxidation process for oxidizing the adsorbed silicon-containing gas to be converted into a silicon oxide film. A monovalent aminosilane is employed as the silicon-containing gas.