The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2013
Filed:
Mar. 25, 2010
Yee-chia Yeo, Hsin-Chu, TW;
Burn-jeng Lin, Hsin-Chu, TW;
Chenming HU, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An immersion lithographic systemcomprises an optical surface, an immersion fluidwith a pH less than 7 contacting at least a portion of the optical surface, and a semiconductor structurehaving a topmost photoresist layerwherein a portion of the photoresist is in contact with the immersion fluid. Further, a method for illuminating a semiconductor structurehaving a topmost photoresist layercomprising the steps of: introducing an immersion fluidinto a space between an optical surfaceand the photoresist layer wherein the immersion fluid has a pH of less than 7, and directing light preferably with a wavelength of less than 450 nm through the immersion fluid and onto the photoresist.