The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2013
Filed:
Jan. 17, 2012
Chen-yen Lin, Keelung, TW;
Yung-ming Lin, Taichung, TW;
Po-chun Yeh, Taichung, TW;
Jeng-wei Yu, New Taipei, TW;
Chih-ming Lai, New Taipei, TW;
Lung-han Peng, Taipei, TW;
Chen-Yen Lin, Keelung, TW;
Yung-Ming Lin, Taichung, TW;
Po-Chun Yeh, Taichung, TW;
Jeng-Wei Yu, New Taipei, TW;
Chih-Ming Lai, New Taipei, TW;
Lung-Han Peng, Taipei, TW;
Opto Tech Corporation, Hsinchu, TW;
Abstract
A light emitting diode includes a substrate, a plurality of pillar structures, a filler structure, a transparent conductive layer, a first electrode, and a second electrode. These pillar structures are formed on the substrate. Each of the pillar structures includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first type semiconductor layers are formed on the substrate. The pillar structures are electrically connected with each other through the first type semiconductor layers. The filler structure is formed between the pillar structures. The filler structure and the second type semiconductor layers of the pillar structures are covered with the transparent conductive layer. The first electrode is in contact with the transparent conductive layer. The second electrode is in contact with the first type semiconductor layer.