The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2013
Filed:
Nov. 22, 2010
Weimin LI, Boise, ID (US);
Gurtej S. Sandhu, Boise, ID (US);
Weimin Li, Boise, ID (US);
Gurtej S. Sandhu, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A cap material may be formed over a photopatternable material on a semiconductor substrate. The cap material absorbs or reflects radiation and protects the photopatternable material from a first wavelength of radiation used in patterning the photoresist layer. Upon exposure to a first wavelength of radiation, the photopatternable material may be converted into a silicon dioxide-based material. The silicon dioxide-based material may be selectively removed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile