The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2013

Filed:

Jul. 14, 2010
Applicants:

Dan Millward, Boise, ID (US);

Kaveri Jain, Boise, ID (US);

Zishu Zhang, Boise, ID (US);

Lijing Gou, Boise, ID (US);

Anton DE Villiers, Boise, ID (US);

Jianming Zhou, Boise, ID (US);

Yuan He, Boise, ID (US);

Michael Hyatt, Boise, ID (US);

Scott L. Light, Boise, ID (US);

Inventors:

Dan Millward, Boise, ID (US);

Kaveri Jain, Boise, ID (US);

Zishu Zhang, Boise, ID (US);

Lijing Gou, Boise, ID (US);

Anton de Villiers, Boise, ID (US);

Jianming Zhou, Boise, ID (US);

Yuan He, Boise, ID (US);

Michael Hyatt, Boise, ID (US);

Scott L. Light, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/26 (2006.01);
U.S. Cl.
CPC ...
Abstract

Some embodiments include methods of forming patterns. A semiconductor substrate is formed to comprise an electrically insulative material over a set of electrically conductive structures. An interconnect region is defined across the electrically conductive structures, and regions on opposing sides of the interconnect region are defined as secondary regions. A two-dimensional array of features is formed over the electrically insulative material. The two-dimensional array extends across the interconnect region and across the secondary regions. A pattern of the two-dimensional array is transferred through the electrically insulative material of the interconnect region to form contact openings that extend through the electrically insulative material and to the electrically conductive structures, and no portions of the two-dimensional array of the secondary regions is transferred into the electrically insulative material.


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