The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2013
Filed:
Nov. 18, 2011
An-hung Lin, New Taipei, TW;
Hong-ze Lin, Hsinchu, TW;
Bo-jui Huang, Hsinchu, TW;
Wei-shan Liao, Yunlin County, TW;
Ting-zhou Yan, Kaohsiung, TW;
Wei-chun Chang, Kaohsiung, TW;
Chun-yao Lee, New Taipei, TW;
Kun-yi Chou, New Taipei, TW;
An-Hung Lin, New Taipei, TW;
Hong-Ze Lin, Hsinchu, TW;
Bo-Jui Huang, Hsinchu, TW;
Wei-Shan Liao, Yunlin County, TW;
Ting-Zhou Yan, Kaohsiung, TW;
Wei-Chun Chang, Kaohsiung, TW;
Chun-Yao Lee, New Taipei, TW;
Kun-Yi Chou, New Taipei, TW;
United Microelectronics Corporation, Hsinchu, TW;
Abstract
A high voltage semiconductor device is provided. A first-polarity buried layer is formed in the substrate. A first high voltage second-polarity well region is located over the first-polarity buried layer. A second-polarity base region is disposed within the first high voltage second-polarity well region. A source region is disposed within the second-polarity base region. A high voltage deep first-polarity well region is located over the first-polarity buried layer and closely around the first high voltage second-polarity well region. A first-polarity drift region is disposed within the high voltage deep first-polarity well region. A gate structure is disposed over the substrate. A second high voltage second-polarity well region is located over the first-polarity buried layer and closely around the high voltage deep first-polarity well region. A deep first-polarity well region is located over the first-polarity buried layer and closely around the second high voltage second-polarity well region.