The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2013
Filed:
May. 16, 2011
Yen-liang LU, Kaohsiung, TW;
Chun-ling Lin, Tainan, TW;
Chi-mao Hsu, Tainan, TW;
Chin-fu Lin, Tainan, TW;
Chun-hung Chen, Tainan, TW;
Tsun-min Cheng, Changhua County, TW;
Meng-hong Tsai, Kaohsiung, TW;
Yen-Liang Lu, Kaohsiung, TW;
Chun-Ling Lin, Tainan, TW;
Chi-Mao Hsu, Tainan, TW;
Chin-Fu Lin, Tainan, TW;
Chun-Hung Chen, Tainan, TW;
Tsun-Min Cheng, Changhua County, TW;
Meng-Hong Tsai, Kaohsiung, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for fabricating through-silicon via structure is disclosed. The method includes the steps of: providing a semiconductor substrate; forming a through-silicon via in the semiconductor substrate; covering a liner in the through-silicon via; performing a baking process on the liner; forming a barrier layer on the liner; and forming a through-silicon via electrode in the through-silicon via.