The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2013

Filed:

Jun. 30, 2011
Applicants:

Tuqiang NI, Pleasanton, CA (US);

Weinan Jiang, San Jose, CA (US);

Frank Y. Lin, Fremont, CA (US);

Chung-ho Huang, Fremont, CA (US);

Inventors:

Tuqiang Ni, Pleasanton, CA (US);

Weinan Jiang, San Jose, CA (US);

Frank Y. Lin, Fremont, CA (US);

Chung-Ho Huang, Fremont, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23F 1/00 (2006.01); C23F 1/08 (2006.01);
U.S. Cl.
CPC ...
Abstract

The amount of RF power supplied to a plasma in a vacuum plasma processing chamber is gradually changed on a preprogrammed basis in response to signals stored in a computer memory. The computer memory stores signals so that other processing chamber parameters (pressure, gas species and gas flow rates) remain constant while the gradual change occurs. The stored signals enable rounded corners, instead of sharp edges, to be etched, e.g., at an intersection of a trench wall and base.


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