The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8476712 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 02, 2013

Filed:

Sep. 30, 2010
Applicants:

Roman Baburske, Chemnitz, DE;

Josef Lutz, Chemnitz, DE;

Ralf Siemieniec, Villach, AT;

Hans-joachim Schulze, Taufkirchen, DE;

Inventors:

Roman Baburske, Chemnitz, DE;

Josef Lutz, Chemnitz, DE;

Ralf Siemieniec, Villach, AT;

Hans-Joachim Schulze, Taufkirchen, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/62 (2006.01);
U.S. Cl.
CPC ...
Abstract

A bipolar semiconductor component, in particular a diode, comprising an anode structure which controls its emitter efficiency in a manner dependent on the current density in such a way that the emitter efficiency is low at small current densities and sufficiently high at large current densities, and an optional cathode structure, which can inject additional holes during commutation, and production methods therefor.


Find Patent Forward Citations

Baburske, Roman. (2013). Surge-current-resistant semiconductor diode with soft recovery behavior and methods for producing a semiconductor diode (U.S. Patent No. 8476712). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8476712

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