The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2013
Filed:
Jun. 27, 2011
Yong-fa Huang, Tainan, TW;
Cheng-han Wu, Taichung, TW;
Yuan-chi Pai, Tainan, TW;
Chun-chi Yu, Taipei, TW;
Hung-yi Wu, Keelung, TW;
Yong-Fa Huang, Tainan, TW;
Cheng-Han Wu, Taichung, TW;
Yuan-Chi Pai, Tainan, TW;
Chun-Chi Yu, Taipei, TW;
Hung-Yi Wu, Keelung, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for forming photoresist patterns includes providing a substrate, forming a bi-layered photoresist on the substrate, and performing a photolithography process to pattern the bi-layered photoresist. The bi-layered photoresist includes a first photoresist layer and a second photoresist layer positioned between the first photoresist layer and the substrate. The first photoresist layer has a first refraction index and the second photoresist layer has a second refraction index, and the second refraction index is larger than the first refraction index.