The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Aug. 05, 2004
Heather Mcculloh, Kennebunk, ME (US);
Denis Finbarr O'connell, Palo Alto, CA (US);
Sergei Drizlikh, Scarborough, ME (US);
Douglas Brisbin, San Jose, CA (US);
Heather McCulloh, Kennebunk, ME (US);
Denis Finbarr O'Connell, Palo Alto, CA (US);
Sergei Drizlikh, Scarborough, ME (US);
Douglas Brisbin, San Jose, CA (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
An insulating material interposed between two conductive materials can experience plasma process induced damage (PPID) when a plasma process is used to deposit a dielectric onto one of the conductive materials. This PPID can be reduced by reducing electric charge accumulation on the one conductive material during the plasma process dielectric deposition.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile