The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Feb. 25, 2010
Po-cheng Shih, Hsinchu, TW;
Kuan-chen Wang, Hsinchu, TW;
Chung-chi Ko, Nantou, TW;
Keng-chu Lin, Chao-Chou Ping-Tung, TW;
Tai-yen Peng, Hsinchu, TW;
Wen-kuo Hsieh, Changhua County, TW;
Chih-hao Chen, Hsinchu, TW;
Po-Cheng Shih, Hsinchu, TW;
Kuan-Chen Wang, Hsinchu, TW;
Chung-Chi Ko, Nantou, TW;
Keng-Chu Lin, Chao-Chou Ping-Tung, TW;
Tai-Yen Peng, Hsinchu, TW;
Wen-Kuo Hsieh, Changhua County, TW;
Chih-Hao Chen, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of lithography patterning includes forming a mask layer on a material layer and forming a capping layer on the mask layer. The capping layer is a boron-containing layer with a higher resistance to an etching reaction of patterning process of the material layer. By adapting the boron-containing layer as the capping layer, the thickness of the mask layer can be thus reduced. Hence, a better gap filling for forming an interconnect metallization in the material layer could be achieved as well.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile