The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Jul. 22, 2010
Eng Huat Toh, Singapore, SG;
Jae Gon Lee, Singapore, SG;
Chung Foong Tan, Singapore, SG;
Shiang Yang Ong, Singapore, SG;
Elgin Quek, Singapore, SG;
Eng Huat Toh, Singapore, SG;
Jae Gon Lee, Singapore, SG;
Chung Foong Tan, Singapore, SG;
Shiang Yang Ong, Singapore, SG;
Elgin Quek, Singapore, SG;
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Abstract
A method (and semiconductor device) of fabricating a semiconductor device provides a filed effect transistor (FET) with reduced contact resistance (and series resistance) for improved device performance. An impurity is implanted in the source/drain (S/D) regions after contact silicide formation and a spike anneal process is performed that lowers the schottky barrier height (SBH) of the interface between the silicide and the lower junction region of the S/D regions. This results in lower contact resistance and reduces the thickness (and Rs) of the region at the silicide-semiconductor interface.