The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Apr. 18, 2012
Applicants:
Chun-hsien Huang, Tainan, TW;
Ming-jui Chen, Hsinchu, TW;
Chia-wei Huang, Kaohsiung, TW;
Ting-cheng Tseng, Tainan, TW;
Inventors:
Chun-Hsien Huang, Tainan, TW;
Ming-Jui Chen, Hsinchu, TW;
Chia-Wei Huang, Kaohsiung, TW;
Ting-Cheng Tseng, Tainan, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for designing a stressor pattern is described, wherein the stressor pattern is used to form S/D regions of a second-type MOS transistor. A first distance between a boundary of the stressor pattern and a first active area of a first-type MOS transistor is derived. If the first distance is less than a safe distance, the stressor pattern is shrunk to make the first distance at least equal to the safe distance.