The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2013
Filed:
May. 10, 2012
Yuji Ando, Tokyo, JP;
Hironobu Miyamoto, Tokyo, JP;
Tatsuo Nakayama, Tokyo, JP;
Yasuhiro Okamoto, Tokyo, JP;
Takashi Inoue, Tokyo, JP;
Yasuhiro Murase, Tokyo, JP;
Kazuki Ota, Tokyo, JP;
Akio Wakejima, Tokyo, JP;
Naotaka Kuroda, Tokyo, JP;
Yuji Ando, Tokyo, JP;
Hironobu Miyamoto, Tokyo, JP;
Tatsuo Nakayama, Tokyo, JP;
Yasuhiro Okamoto, Tokyo, JP;
Takashi Inoue, Tokyo, JP;
Yasuhiro Murase, Tokyo, JP;
Kazuki Ota, Tokyo, JP;
Akio Wakejima, Tokyo, JP;
Naotaka Kuroda, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
Disclosed is an HJFETwhich comprises: a channel layercomposed of InGaN (0≦y≦1); a carrier supply layercomposed of AlGaN (0≦x≦1), the carrier supply layerbeing provided over the channel layerand including at least one p-type layer; and a source electrodeS, a drain electrodeD and a gate electrodewhich are disposed facing the channel layerthrough the p-type layer, and provided over the carrier supply layer. The following relational expression is satisfied: 5.6×10x<N×η×t [cm]<5.6×10x, where x denotes an Al compositional ratio of said carrier supply layer, t denotes a thickness of said p-type layer, Ndenotes an impurity concentration, and η denotes an activation ratio.