The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2013
Filed:
Jan. 24, 2007
Sakae Koyata, Tokyo, JP;
Tomohiro Hashii, Tokyo, JP;
Katsuhiko Murayama, Tokyo, JP;
Kazushige Takaishi, Tokyo, JP;
Takeo Katoh, Tokyo, JP;
Sakae Koyata, Tokyo, JP;
Tomohiro Hashii, Tokyo, JP;
Katsuhiko Murayama, Tokyo, JP;
Kazushige Takaishi, Tokyo, JP;
Takeo Katoh, Tokyo, JP;
Sumco Corporation, Tokyo, JP;
Abstract
An object of the present invention is to provide a method for etching a single wafer, which effectively realizes a high flatness of wafer and an increase in productivity thereof. In a method for etching a single wafer, a single thin disk-like wafer sliced from a silicon single crystal ingot is spun, and a front surface of the wafer is etched with an etching solution supplied thereto. In the method, a plurality of supply nozzles are disposed above and opposite to the front surface of the wafer at different portions in the radial direction of the wafer, respectively; and then one or more conditions selected from the group consisting of temperatures, kinds, and supply flow rates of etching solutions from the plurality of supply nozzles are changed.