The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2013
Filed:
Nov. 01, 2010
Nicholas P. T. Bateman, Reading, MA (US);
Helen L. Maynard, North Reading, MA (US);
Benjamin B. Riordon, Newburyport, MA (US);
Christopher R. Hatem, Salisbury, MA (US);
Deepak Ramappa, Boston, MA (US);
Nicholas P. T. Bateman, Reading, MA (US);
Helen L. Maynard, North Reading, MA (US);
Benjamin B. Riordon, Newburyport, MA (US);
Christopher R. Hatem, Salisbury, MA (US);
Deepak Ramappa, Boston, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
Various methods of utilizing the physical and chemical property differences between amorphized and crystalline silicon are used to create masks that can be used for subsequent implants. In some embodiments, the difference in film growth between amorphous and crystalline silicon is used to create the mask. In other embodiments, the difference in reflectivity or light absorption between amorphous and crystalline silicon is used to create the mask. In other embodiments, differences in the characteristics of doped and undoped silicon is used to create masks.