The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2013
Filed:
Apr. 06, 2009
Applicant:
Noel Hoilien, Minneapolis, MN (US);
Inventor:
Noel Hoilien, Minneapolis, MN (US);
Assignee:
Polar Semiconductor, Inc., Bloomington, MN (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01);
U.S. Cl.
CPC ...
Abstract
A polysilicon-filled isolation trench in a substrate is effective to isolate adjacent semiconductor devices from one another. A silicon nitride cap is provided to protect the polysilicon in the isolation trench from subsequent field oxidation. The cap has lateral boundaries that extend between the side boundaries of the polysilicon and the sidewalls of the trench. Subsequent field oxide regions formed adjacent to the trench establish a gap dimension from the substrate to a top surface of the field oxide regions adjacent to the polysilicon side boundaries that is no less than half of the field oxide thickness.