The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2013

Filed:

Mar. 03, 2010
Applicants:

Huan-ting Tseng, Kao-Hsiung Hsien, TW;

Chun-hsien Huang, Tainan County, TW;

Hung-chin Huang, Tainan, TW;

Chen-wei Lee, Hsinchu, TW;

Inventors:

Huan-Ting Tseng, Kao-Hsiung Hsien, TW;

Chun-Hsien Huang, Tainan County, TW;

Hung-Chin Huang, Tainan, TW;

Chen-Wei Lee, Hsinchu, TW;

Assignee:

United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing doping patterns includes providing a substrate having a plurality of STIs defining and electrically isolating a plurality of active regions in the substrate, forming a patterned photoresist having a plurality of exposing regions for exposing the active regions and the STIs in between the active regions on the substrate, and performing an ion implantation to form a plurality of doping patterns in the active regions.


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