The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2013
Filed:
Sep. 28, 2009
Chang-woo Shin, Seoul, KR;
Hyun-soo Chung, Hwaseong-si, KR;
Eun-chul Ahn, Yongin-si, KR;
Jum-gon Kim, Suwon-si, KR;
Jin-ho Chun, Seoul, KR;
Chang-Woo Shin, Seoul, KR;
Hyun-Soo Chung, Hwaseong-si, KR;
Eun-Chul Ahn, Yongin-si, KR;
Jum-Gon Kim, Suwon-si, KR;
Jin-Ho Chun, Seoul, KR;
SAMSUNG Electronics Co., Ltd., Suwon-si, KR;
Abstract
A semiconductor device including an interconnection structure including a copper pad, a pad barrier layer and a metal redistribution layer, an interconnection structure thereof and methods of fabricating the same are provided. The semiconductor device includes a copper pad disposed on a first layer, a pad barrier layer including titanium disposed on the copper pad, an inorganic insulating layer disposed on the pad barrier layer, a buffer layer disposed on the inorganic insulating layer, wherein the inorganic insulating layer and the buffer layer expose a portion of the pad barrier layer, a seed metal layer disposed on the exposed buffer layer, a metal redistribution layer disposed on the seed metal layer, and a first protective layer disposed on the metal redistribution layer.