The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2013
Filed:
Mar. 23, 2012
Benjamin B. Riordon, Newburyport, MA (US);
Nicholas P. T. Bateman, Reading, MA (US);
William T. Weaver, Austin, TX (US);
Russell J. Low, Rowley, MA (US);
Benjamin B. Riordon, Newburyport, MA (US);
Nicholas P. T. Bateman, Reading, MA (US);
William T. Weaver, Austin, TX (US);
Russell J. Low, Rowley, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
In an ion implanter, an ion current measurement device is disposed behind a mask co-planarly with respect to a surface of a target substrate as if said target substrate was positioned on a platen. The ion current measurement device is translated across the ion beam. The current of the ion beam directed through a plurality of apertures of the mask is measured using the ion current measurement device. In this manner, the position of the mask with respect to the ion beam as well as the condition of the mask may be determined based on the ion current profile measured by the ion current measurement device.