The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2013
Filed:
Sep. 13, 2012
Nicholas C. M. Fuller, North Hills, NY (US);
Pratik P. Joshi, Cliffside Park, NJ (US);
Mahmoud Khojasteh, Poughkeepsie, NY (US);
Rajiv M. Ranade, Brewster, NY (US);
George G. Totir, Newtown, CT (US);
Nicholas C. M. Fuller, North Hills, NY (US);
Pratik P. Joshi, Cliffside Park, NJ (US);
Mahmoud Khojasteh, Poughkeepsie, NY (US);
Rajiv M. Ranade, Brewster, NY (US);
George G. Totir, Newtown, CT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An organic planarizing layer (OPL) is formed atop a semiconductor substrate which includes a plurality of gate lines thereon. Each gate line includes at least a high k gate dielectric and a metal gate. A patterned photoresist having at least one pattern formed therein is then positioned atop the OPL. The at least one pattern in the photoresist is perpendicular to each of the gate lines. The pattern is then transferred by etching into the OPL and portions of each of the underlying gate lines to provide a plurality of gate stacks each including at least a high k gate dielectric portion and a metal gate portion. The patterned photoresist and the remaining OPL layer are then removed utilizing a sequence of steps including first contacting with a first acid, second contacting with an aqueous cerium-containing solution, and third contacting with a second acid.