The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2013
Filed:
Mar. 30, 2011
Yasuhiro Nojiri, Mie-ken, JP;
Hiroyuki Fukumizu, Mie-ken, JP;
Shinichi Nakao, Kanagawa-ken, JP;
Kei Watanabe, Tokyo, JP;
Kazuhiko Yamamoto, Kanagawa-ken, JP;
Ichiro Mizushima, Kanagawa-ken, JP;
Yoshio Ozawa, Kanagawa-ken, JP;
Yasuhiro Nojiri, Mie-ken, JP;
Hiroyuki Fukumizu, Mie-ken, JP;
Shinichi Nakao, Kanagawa-ken, JP;
Kei Watanabe, Tokyo, JP;
Kazuhiko Yamamoto, Kanagawa-ken, JP;
Ichiro Mizushima, Kanagawa-ken, JP;
Yoshio Ozawa, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a method is disclosed for manufacturing a nonvolatile memory device. The nonvolatile memory device includes a memory cell connected to a first interconnect and a second interconnect. The method can include forming a first electrode film on the first interconnect. The method can include forming a layer including a plurality of carbon nanotubes dispersed inside an insulator on the first electrode film. At least one carbon nanotube of the plurality of carbon nanotubes is exposed from a surface of the insulator. The method can include forming a second electrode film on the layer. In addition, the method can include forming a second interconnect on the second electrode film.