The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2013
Filed:
Oct. 17, 2011
Kuang-chu Chen, Hsinchu, TW;
Cheng Tao Chen, Hsinchu, TW;
Chung-lung Hsu, Hsinchu, TW;
Chun-yao Chiu, Hsinchu County, TW;
Chin-yung Chang, Hsinchu, TW;
Kuang-Chu Chen, Hsinchu, TW;
Cheng Tao Chen, Hsinchu, TW;
Chung-Lung Hsu, Hsinchu, TW;
Chun-Yao Chiu, Hsinchu County, TW;
Chin-Yung Chang, Hsinchu, TW;
Nyquest Technology Corporation Limited, Hsinchu, TW;
Nuvoton Technology Corporation, Hsinchu, TW;
Abstract
A mask ROM fabrication method which comprises steps: sequentially forming a gate dielectric layer and a first photoresist layer on a substrate; letting a light having a wavelength of 365 nm pass through a first phase shift mask to photolithographically form on the first photoresist layer a plurality of first trenches having a width of 243-365 nm; doping the substrate to form a plurality of embedded bit lines having a width of 243-365 nm; removing the first photoresist layer; sequentially forming a polysilicon layer and a second photoresist layer on the gate dielectric layer; and letting the light pass through a second phase shift mask to photolithographically form a plurality of polysilicon word lines on the polysilicon layer. Thereby is reduced the line width of mask ROM to 243-365 nm and decreased the area of mask ROM.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile