The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2013
Filed:
Dec. 30, 2010
Applicants:
Chu-ming MA, Hsinchu, TW;
Tin-wei Wu, Hsinchu, TW;
Chih-hsiang Yang, Hsinchu, TW;
Inventors:
Assignee:
MACRONIX International Co. Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods of forming a semiconductor trench and forming dual trenches and a structure for isolating devices are provided. The structure for isolating devices is disposed in a substrate having a periphery area and an array area. The structure for isolating devices includes a first isolation structure and a second isolation structure. The first isolation structure has a profile with at least three steps and is disposed in the substrate in the periphery area. The second isolation structure has a profile with at least two steps and is disposed in the substrate in the array area.