The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2013
Filed:
May. 25, 2012
Yuan-chih Hsieh, Hsinchu, TW;
Richard Chu, Taipei, TW;
Ming-tung Wu, Hsinchu, TW;
Martin Liu, Yonghe, TW;
Lan-lin Chao, Sindian, TW;
Chia-shiung Tsai, Hsin-Chu, TW;
Yuan-Chih Hsieh, Hsinchu, TW;
Richard Chu, Taipei, TW;
Ming-Tung Wu, Hsinchu, TW;
Martin Liu, Yonghe, TW;
Lan-Lin Chao, Sindian, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure provides various embodiments of a via structure and method of manufacturing same. In an example, a method for forming a via structure includes forming a via in a semiconductor substrate, wherein via sidewalls of the via are defined by the semiconductor substrate; forming a dielectric layer on the via sidewalls; removing the dielectric layer from a portion of the via sidewalls; and forming a conductive layer to fill the via, wherein the conductive layer is disposed over the dielectric layer and the portion of the via sidewalls. In an example, the dielectric layer is an oxide layer.