The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2013
Filed:
Sep. 23, 2011
Hsiu-han Liao, Hsinchu, TW;
Lu-ping Chiang, Hsinchu, TW;
Hsiu-Han Liao, Hsinchu, TW;
Lu-Ping Chiang, Hsinchu, TW;
Winbound Electronics Corp., Taichung, TW;
Abstract
A method of fabricating a memory is provided. A substrate including a memory region and a periphery region is provided. A plurality of first gates is formed in the memory region and a plurality of first openings is formed between the first gates. A nitride layer is formed on the substrate in the memory region, and the nitride layer covers the first gates and the first openings. An oxide layer is formed on the substrate in the periphery region. A nitridization process is performed to nitridize the oxide layer into a nitridized oxide layer. A conductive layer is formed on the substrate, and the conductive layer includes a cover layer disposed on the substrate in the memory region and a plurality of second gates disposed on the substrate in the periphery region. The cover layer covers the nitride layer and fills the first openings.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile