The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2013
Filed:
Apr. 01, 2010
Andy Wei, Dresden, DE;
Thorsten Kammler, Ottendorf-Okrilla, DE;
Jan Hoentschel, Dresden, DE;
Manfred Horstmann, Duerrroehrsdorf-Dittersbach, DE;
Andy Wei, Dresden, DE;
Thorsten Kammler, Ottendorf-Okrilla, DE;
Jan Hoentschel, Dresden, DE;
Manfred Horstmann, Duerrroehrsdorf-Dittersbach, DE;
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
A method of forming a field effect transistor comprises providing a substrate comprising a biaxially strained layer of a semiconductor material. A gate electrode is formed on the biaxially strained layer of semiconductor material. A raised source region and a raised drain region are formed adjacent the gate electrode. Ions of a dopant material are implanted into the raised source region and the raised drain region to form an extended source region and an extended drain region. Moreover, in methods of forming a field effect transistor according to embodiments of the present invention, a gate electrode can be formed in a recess of a layer of semiconductor material. Thus, a field effect transistor wherein a source side channel contact region and a drain side channel contact region located adjacent a channel region are subject to biaxial strain can be obtained.