The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2013
Filed:
Mar. 06, 2007
Jen-cheng Liu, Hsinchu, TW;
Chin-hong Cheng, Hsinchu, TW;
Chien-hsien Tseng, Hsinchu, TW;
Alex Hsu, Hsinchu, TW;
Feng-jia Shiu, Hsinchu, TW;
Shou-gwo Wuu, Hsinchu, TW;
Jen-Cheng Liu, Hsinchu, TW;
Chin-Hong Cheng, Hsinchu, TW;
Chien-Hsien Tseng, Hsinchu, TW;
Alex Hsu, Hsinchu, TW;
Feng-Jia Shiu, Hsinchu, TW;
Shou-Gwo Wuu, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure provides an image sensor semiconductor device. A semiconductor substrate having a first-type conductivity is provided. A plurality of sensor elements is formed in the semiconductor substrate. An isolation feature is formed between the plurality of sensor elements. An ion implantation process is performed to form a doped region having the first-type conductivity substantially underlying the isolation feature using at least two different implant energy.