The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2013
Filed:
Jun. 06, 2011
Qing Xu, Fremont, CA (US);
Camelia Rusu, Pleasanton, CA (US);
Brian K. Mcmillin, Pleasanton, CA (US);
Alexander M. Paterson, San Jose, CA (US);
Qing Xu, Fremont, CA (US);
Camelia Rusu, Pleasanton, CA (US);
Brian K. McMillin, Pleasanton, CA (US);
Alexander M. Paterson, San Jose, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for etching features into an etch layer in a plasma processing chamber is provided. An optically timed deposition phase is provided comprising providing a flow of deposition phase gas, detecting the presence of deposition gas within the plasma processing chamber, providing RF energy for forming a plasma from the deposition phase gas in the plasma processing chamber, and stopping the flow of the deposition gas into the plasma processing chamber. An optically timed etching phase is provided, comprising providing a flow of an etch gas, detecting the presence of the etch gas within the plasma processing chamber, providing RF energy for forming a plasma from the etch gas in the plasma processing chamber, and stopping the flow of the etch gas into the plasma processing chamber.