The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2013

Filed:

Jan. 07, 2011
Applicants:

Yuan He, Boise, ID (US);

Kaveri Jain, Boise, ID (US);

Lijing Gou, Boise, ID (US);

Zishu Zhang, Boise, ID (US);

Anton J. Devilliers, Boise, ID (US);

Michael Hyatt, Boise, ID (US);

Jianming Zhou, Boise, ID (US);

Scott Light, Boise, ID (US);

Dan B. Millward, Boise, ID (US);

Inventors:

Yuan He, Boise, ID (US);

Kaveri Jain, Boise, ID (US);

Lijing Gou, Boise, ID (US);

Zishu Zhang, Boise, ID (US);

Anton J. DeVilliers, Boise, ID (US);

Michael Hyatt, Boise, ID (US);

Jianming Zhou, Boise, ID (US);

Scott Light, Boise, ID (US);

Dan B. Millward, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/36 (2012.01);
U.S. Cl.
CPC ...
Abstract

An imaging device comprising at least one array pattern region and at least one attenuation region. A plurality of imaging features in the at least one array pattern region and a plurality of assist features in the at least one attenuation region are substantially the same size as one another and are formed substantially on pitch. Methods of forming an imaging device and methods of forming a semiconductor device structure are also disclosed.


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