The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2013

Filed:

Jul. 27, 2010
Applicants:

Yoko Iwakaji, Kanagawa-ken, JP;

Jun Hirota, Kanagawa-ken, JP;

Kyoichi Suguro, Kanagawa-ken, JP;

Moto Yabuki, Tokyo, JP;

Inventors:

Yoko Iwakaji, Kanagawa-ken, JP;

Jun Hirota, Kanagawa-ken, JP;

Kyoichi Suguro, Kanagawa-ken, JP;

Moto Yabuki, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to one embodiment, a method for manufacturing a memory device is disclosed. The method includes forming a silicon diode. At least an upper portion of the silicon diode is made of a semiconductor material containing silicon and doped with impurity. The method includes forming a metal layer made of a metal on the silicon diode. The method includes forming a metal nitride layer made of a nitride of the metal on the metal layer. The method includes forming a resistance change film. In addition, the method includes reacting the metal layer with the silicon diode and the metal nitride layer by heat treatment to form an electrode film containing the metal, silicon, and nitrogen.


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